IC design of low power, wide tuning range VCO in 90 nm CMOS technology  被引量:1

IC design of low power, wide tuning range VCO in 90 nm CMOS technology

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作  者:李竹 王志功 李智群 李芹 刘法恩 

机构地区:[1]Institute of RF- & OE-ICs Southeast University [2]Nanjing University of Science and Technology

出  处:《Journal of Semiconductors》2014年第12期133-138,共6页半导体学报(英文版)

基  金:supported by the National Basic Research Program of China(No.2010CB327404);the National High Technology Research and Development Program of China(No.2011AA10305);the National Natural Science Foundation of China(No.60901012)

摘  要:A low power VCO with a wide tuning range and low phase noise has been designed and realized in a standard 90 nm CMOS technology. A newly proposed current-reuse cross-connected pair is utilized as a negative conductance generator to compensate the energy loss of the resonator. The supply current is reduced by half compared to that of the conventional LC-VCO. An improved inversion-mode MOSFET(IMOS) varactor is introduced to extend the capacitance tuning range from 32.8% to 66%. A detailed analysis of the proposed varactor is provided. The VCO achieves a tuning range of 27–32.5 GHz, exhibiting a frequency tuning range(FTR) of 18.4%and a phase noise of –101.38 dBc/Hz at 1 MHz offset from a 30 GHz carrier, and shows an excellent FOM of –185dBc/Hz. With the voltage supply of 1.5 V, the core circuit of VCO draws only 2.1 m A DC current.A low power VCO with a wide tuning range and low phase noise has been designed and realized in a standard 90 nm CMOS technology. A newly proposed current-reuse cross-connected pair is utilized as a negative conductance generator to compensate the energy loss of the resonator. The supply current is reduced by half compared to that of the conventional LC-VCO. An improved inversion-mode MOSFET(IMOS) varactor is introduced to extend the capacitance tuning range from 32.8% to 66%. A detailed analysis of the proposed varactor is provided. The VCO achieves a tuning range of 27–32.5 GHz, exhibiting a frequency tuning range(FTR) of 18.4%and a phase noise of –101.38 dBc/Hz at 1 MHz offset from a 30 GHz carrier, and shows an excellent FOM of –185dBc/Hz. With the voltage supply of 1.5 V, the core circuit of VCO draws only 2.1 m A DC current.

关 键 词:CMOS MICROWAVE millimeter wave IMOS varactor phase noise voltage controlled oscillators 

分 类 号:TN402[电子电信—微电子学与固体电子学]

 

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