Reducing the mechanical action of polishing pressure and abrasive during copper chemical mechanical planarization  

作　　者：蒋勐婷 刘玉岭 

机构地区：[1]Institute of Microelectronics,Hebei University of Technology

出　　处：《Journal of Semiconductors》2014年第12期139-143,共5页半导体学报（英文版）

基　　金：supported by the 02 Science and Technology Key Program of the National Medium-and Long-Term Science and Technology Development Plan of China(No.2009ZX02308);the Natural Science Foundation of Hebei Province,China(No.E2013202247)

摘　　要：Chemical mechanical planarization（CMP） is a critical process in deep sub-micron integrated circuit manufacturing. This study aims to improve the planarization capability of slurry, while minimizing the mechanical action of the pressure and silica abrasive. Through conducting a series of single-factor experiments, the appropriate pressure and the optimum abrasive concentration for the alkaline slurry were confirmed. However, the reduced mechanical action may bring about a decline of the polishing rate, and further resulting in the decrease of throughput.Therefore, we take an approach to compensating for the loss of mechanical action by optimizing the composition of the slurry to enhance the chemical action in the CMP process. So 0.5 wt% abrasive concentration of alkaline slurry for copper polishing was developed, it can achieve planarization efficiently and obtain a wafer surface with no corrosion defect at a reduced pressure of 1.0 psi. The results presented here will contribute to the development of a ＂softer gentler polishing＂ technique in the future.Chemical mechanical planarization（CMP） is a critical process in deep sub-micron integrated circuit manufacturing. This study aims to improve the planarization capability of slurry, while minimizing the mechanical action of the pressure and silica abrasive. Through conducting a series of single-factor experiments, the appropriate pressure and the optimum abrasive concentration for the alkaline slurry were confirmed. However, the reduced mechanical action may bring about a decline of the polishing rate, and further resulting in the decrease of throughput.Therefore, we take an approach to compensating for the loss of mechanical action by optimizing the composition of the slurry to enhance the chemical action in the CMP process. So 0.5 wt% abrasive concentration of alkaline slurry for copper polishing was developed, it can achieve planarization efficiently and obtain a wafer surface with no corrosion defect at a reduced pressure of 1.0 psi. The results presented here will contribute to the development of a ＂softer gentler polishing＂ technique in the future.

关 键 词：planarization capability mechanical action alkaline slurry softer gentler polishing 

分 类 号：TN405[电子电信—微电子学与固体电子学] TS543[轻工技术与工程—皮革化学与工程]