嵌入Ag纳米颗粒层的DNA忆阻器  

Organic memristive devices based on DNA embedded in silver nanoparticles layer

作　　者：王嫒[1] 董瑞新[1] 闫循领[1] 

机构地区：[1]聊城大学物理科学与信息工程学院,山东省光通信和科学技术重点实验室,聊城252059

出　　处：《物理学报》2015年第4期339-345,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:11375081);山东省自然科学基金(批准号:ZR2012FM026,ZR2012FL20)资助的课题~~

摘　　要：构建了具有"Al/DNA-CTMAB/Ag NPs/DNA-CTMAB/ITO"结构的有机忆阻器件,并对其电流-电压(I-V)曲线进行测量.结果表明,嵌入Ag纳米颗粒层,不仅可以增强器件的导电性,而且忆阻特性也显著提高.当颗粒粒径在15—20 nm范围时,开-关电流比ION/IOFF能够达到103.器件的I-V特性受扫描电压幅值VA的影响,随着VA的增大,高阻态的电流变化较小,而低阻态的电流明显增大,开(或关)电压VSET(VRESET)和ION/IOFF增加.实验还发现,器件高低阻状态的相互转换取决于外加电场的方向,说明该忆阻器具有极性.Two-terminal electrical bistable device is fabricated with structure ＂A1/deoxyribonucleic acid-cetyltrimethylam- monium bromide/silver nanoparticles/deoxyribonucleic acid-cetyltrimethylammonium bromide/indium tin oxide＂, and I-V curves are measured. The results show that the conductivity and the memristive characteristics are significantly improved by the embedding Ag nanoparticles layer. The optimal particle diameters are in a range of 15-20 nm, and the maximum on/off current ratio can reach 103. It is also found that I-V characteristic of the device depends on the sweeping voltage amplitude VA. As VA increases, switching voltages （VsET, VRESET） and the on/off current ratio ION/IoFF increase. Furthermore, the transition between high-and low-resistance-state depends on the direction of the applied electric field, which shows that the device possesses polarity.

关 键 词：有机忆阻器 DNA生物聚合物 AG纳米颗粒 

分 类 号：TN386[电子电信—物理电子学]