半导体激光器参数的外腔法测量  

Measurement of parameters of semiconductor lasers via operating in an external cavity

作　　者：李大义[1] 陈建国[1] 卢玉村[1] 潘大任[1] 

机构地区：[1]四川大学物理系,成都610064

出　　处：《中国激光》1991年第9期668-671,共4页Chinese Journal of Lasers

基　　金：国家教委博士点基金项目

摘　　要：通过测量运行在外腔中的半导体激光器的P-I(功率电流)曲线,可以确定二极管激光器的重要参量——吸收系数α、对电流的微分小信号增益系数dg/dI以及光子寿命等。Measurement of P-I (power-current) curves of the semiconductor laser in an external cavity may lead to the determination of such diode parameters as the absorption coefficient a, the differential small signal gain coefficient dg/dI and the photon lifetime τ. As a result, a simple and easy method has been proposed to designate some important parameters of semiconductor lasers.

关 键 词：半导体激光器 参数 外腔 测量 

分 类 号：TN248.4[电子电信—物理电子学]