p-GaAs同质结太赫兹探测器的优化与性能  

Optimization and performance of p-GaAs homojunction THz detectors

作　　者：钱飞[1] 王天盟 张月蘅[1] 沈文忠[1] 

机构地区：[1]上海交通大学物理与天文系人工结构及量子调控教育部重点实验室,上海200240

出　　处：《红外与毫米波学报》2015年第1期29-35,共7页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(11074167;91221201;61234005);863计划(2011AA010205)~~

摘　　要：从提高p-GaAs同质结太赫兹探测器量子效率出发,在考虑温度和偏压等参数的影响后,优化了谐振腔增强的p-GaAs同质结太赫兹探测器的材料及结构参数,使探测器的量子效率提高到了17%.并计算了探测器的响应率、探测率和偏压、温度、光谱频率的关系,得到了最佳工作偏压（10~40 m V）、最佳工作温度（〈8 K）和最大探测率（4.1×10^10cm Hz1/2/W）.而通过施加一对匹配的反射镜来构造谐振腔的设计,所能获得的极限量子效率为26%,极限探测率和响应率分别为5.7×10^10cm Hz1/2/W、25.9 A/W.In order to improve the quantum efficiency of THz detectors made of p-GaAs homojunction,the effects of temperature and bias voltage were taken into account. By optimizing the materials and structure parameters of the resonant cavity enhanced p-Ga As HIWIP detectors,its quantum efficiency was increased to 17%. The relationships among the responsivity and detectivity of the detector,bias voltage,temperature and spectral frequency were simulated,leading to an optimized bias voltage range（ 10~40 m V）,an optimal temperature（ 8 K） and a maximum detectivity（ 4.1 ×10^10cm Hz1/2/W）. By applying a pair of matched mirror,the ultimate quantum efficiency,the detectivity and the responsivity are 26%,5.7×10^10 cm Hz1/2/ W and 25.9 A/W,respectively.

关 键 词：p-GaAs同质结太赫兹探测器 谐振器增强 量子效率 探测率 

分 类 号：O047[理学]