厚度对Mg-Sn共掺ZnO薄膜结构和光电性能的影响  

Effects of Thickness on Structure and Photoelectric Properties of Mg-Sn Co-doped ZnO Thin Films

作　　者：刘细妹[1] 胡跃辉[1] 陈义川[1] 胡克艳[1] 徐斌[1] 张志明[1] 

机构地区：[1]景德镇陶瓷学院机械电子工程学院,景德镇333403

出　　处：《人工晶体学报》2015年第1期95-100,114,共7页Journal of Synthetic Crystals

基　　金：国家自然科学基金(2010BGA01100);江西省对外合作资助项目(20132BDH80025);江西省自然科学基金(20132BAB202001;20143ACB21004);江西省主要学科学术和技术带头人培养计划项目(20123BCB22002);江西省高等学校科技落地计划(KJLD12085);江西省教育厅科技资助项目(GJJ12494;GJJ13643;GJJ13625)

摘　　要：采用溶胶凝胶(Sol-Gel)旋涂法在抛光石英衬底上制备不同厚度Mg-Sn共掺的ZnO薄膜。用XRD、SEM、UVVis、PL、FT-IR光谱仪和四探针等对薄膜的微观结构、表面形貌、室温光致发光及光电特性进行表征。薄膜结构分析显示样品均沿c轴高度择优取向,呈六角纤锌矿晶体结构,随着膜厚的增加,薄膜结晶度明显提高,薄膜晶粒尺寸逐渐增大。由SEM照片观察到,厚度的增加明显促进了薄膜表面颗粒生长的均匀性与致密性。由光致发光谱表明:厚度增加,薄膜的本征发光峰增强且均出现较强的紫外发光峰和蓝光发光峰。FT-IR结果显示780 nm厚的薄膜在高波数区域红外吸收明显比320 nm和560 nm弱。薄膜电阻率随厚度增加由1.4×10-2Ω·cm减小至2.6×10-3Ω·cm,且薄膜透过率均保持在90%左右。Mg-Sn co-doped ZnO thin films were prepared on quartz glass substrate with different thickness by Sol-Gel spin coating. The structural and photoelectric properties of these films were studied by XRD,SEM,UV-Vis,PL,FT-IR and Four point probe. The XRD result shows that all films have hexangular wurtzite structure and are preferentially oriented along the c-axis perpendicular to the substrate surface.With the film thickness increases,the crystalline quality of the films and the size of ZnO particle improve obviously. The SEM figures show that the compactness and the uniformity of the particle are promoted with the thickness increasing. According to the PL spectra,the intrinsic luminescence intensity of films increases with the thickness increasing,and all films appear strong ultraviolet photoluminescence peak and blue photoluminescence peak. FT-IR shows the infrared absorption of 780 nm film thickness is obviously weaker than 320 nm and 560 nm in high wave number. The electrical resistivity decreases gradually with the thickness of the film increasing,from 1. 4 × 10^- 2Ω · cm to lowest resistivity of 2. 6 ×10^- 3Ω · cm. The average transmittance of all are about 90%.

关 键 词：溶胶凝胶法 Mg-Sn共掺ZnO 厚度 电阻率 透过率 

分 类 号：O484[理学—固体物理]