双轴压应力Ge材料价带物理参量计算  

Study of Physical Parameters for Valence Band in Biaxially Compressive Strained Ge Materials

作　　者：孟江[1] 乔丽萍[1] 李淑萍[1] 

机构地区：[1]西藏民族学院信息工程学院,陕西咸阳712082

出　　处：《固体电子学研究与进展》2015年第1期21-24,45,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(61162025);2014年西藏民族学院青年学人培育计划资助项目(14myQP05)

摘　　要：应变Ge材料载流子迁移率高,且与硅工艺兼容,在硅基CMOS中的应用潜力大。能带结构是深入研究应变Ge材料基本属性,设计高速/高性能CMOS器件的重要理论依据。为此,本文采用结合形变势理论的kp微扰法,分析了(001)双轴压应力Ge材料价带结构、轻重空穴带Γ点能级及轻重空穴带间分裂能等价带物理参量与应力的理论关系,获得有实用价值的相关结论。There has been a lot of interest in the strained Ge for its high mobility,good compatibility with Si technology and huge potential in the application of silicon-based CMOS.Band structure of strained Ge is the theoretical basis for the understanding of material physics and the design of the high-speed and high-performance CMOS devices.The valence band structure of（001）biaxially compressive strained Ge is studied using kpperturbation method coupled with deformation potential theory.And some important parameters as a function of stress are obtained,including the valence bands edge atΓpoint and the splitting energy between heavy and light valence bands.Quantitative data acquired from the models can provide valuable references for the design of devices.

关 键 词：应变锗 价带 物理参量 

分 类 号：TN304.24[电子电信—物理电子学]