非制冷氧化钒红外焦平面像元光学设计与试验验证  

Uncooled VO_x Infrared Focal Plane Array Pixel Optical Design and Experiment Results

作　　者：孔令德[1] 方辉 杨春丽[1] 黄艳芝 姬玉龙[1] 余连杰[1] 杨文运 姬荣斌[1] 

机构地区：[1]昆明物理研究所,云南昆明650223 [2]北方广微科技有限公司,北京100089

出　　处：《红外技术》2015年第2期97-100,共4页Infrared Technology

摘　　要：非制冷氧化钒红外焦平面像元光学设计旨在提高像元对红外辐射的吸收性能。由于非制冷红外探测器的工作波段通常在8-14μm范围内,要求像元在这个波段内具有较高的红外吸收率。采用光学导纳理论,进行像元微桥结构多层光学膜系优化设计。在器件工艺过程中,调节了桥面膜厚和高度,使桥面与Si衬底上金属反射层之间形成一个谐振腔结构。通过红外傅里叶反射光谱和相对光谱响应测试分析验证表明：像元微桥结构光学设计后,增强了非制冷探测器微桥结构像元在8-14μm波段的红外吸收率和相对光谱响应。An uncooled VOx infrared focal plane array pixel optical design is proposed to improve infrared absorption coefficient of pixel microbridge. 8-14 μm bands are generally used for the uncooled IR detector, an high IR absorption coefficient of pixel is needed. In this paper, we carry out optical simulation and optimization of pixel microbridge model of layer stacks. We adjust the pixel microbridge film thicknesses and air gap highnesses to form a syntonic cavity between the microbridge and the Al reflective film during the preparing processes. The optical design of pixel microbridge improved infrared absorption coefficient of pixel microbridge and relative spectral response in 8-14 μm band, based on infrared Fourier reflection spectroscopy and relative spectral response test.

关 键 词：非制冷氧化钒探测器 像元光学设计 谐振腔 傅里叶反射光谱 相对光谱响应 

分 类 号：TN215[电子电信—物理电子学]