Theoretical study of the optical gain characteristics of a Ge_(1-x)Sn_x alloy for a short-wave infrared laser  

作　　者：张东亮 成步文 薛春来 张旭 丛慧 刘智 张广泽 王启明 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2015年第2期191-197,共7页中国物理B（英文版）

基　　金：supported by the Major State Basic Research Development Program of China(Grant No.2013CB632103);the National High-Technology Research and Development Program of China(Grant No.2012AA012202);the National Natural Science Foundation of China(Grant Nos.61177038 and 61176013)

摘　　要：Optical gain characteristics of Ge1-xSnμx are simulated systematically.With an injection carrier concentration of 5×10^18/cm^3 at room temperature,the maximal optical gain of Ge0.922Sn0.078 alloy（with n-type doping concentration being 5×10^18/cm^3） reaches 500 cm^-1.Moreover,considering the free-carrier absorption effect,we find that there is an optimal injection carrier density to achieve a maximal net optical gain.A double heterostructure Ge0.554Si0.289Sn0.157/Ge0.922Sn0.078/Ge0.554Si0.289Sn0.157 short-wave infrared laser diode is designed to achieve a high injection efficiency and low threshold current density.The simulation values of the device threshold current density Jth are 6.47 kA/cm^2（temperature：200 K,and λ=2050 nm）,10.75 kA/cm^2（temperature：200 K,and λ=2000 nm）,and23.12 kA/cm^2（temperature：300 K,and λ=2100 nm）,respectively.The results indicate the possibility to obtain a Si-based short-wave infrared Ge1-xSnx laser.Optical gain characteristics of Ge1-xSnμx are simulated systematically.With an injection carrier concentration of 5×10^18/cm^3 at room temperature,the maximal optical gain of Ge0.922Sn0.078 alloy（with n-type doping concentration being 5×10^18/cm^3） reaches 500 cm^-1.Moreover,considering the free-carrier absorption effect,we find that there is an optimal injection carrier density to achieve a maximal net optical gain.A double heterostructure Ge0.554Si0.289Sn0.157/Ge0.922Sn0.078/Ge0.554Si0.289Sn0.157 short-wave infrared laser diode is designed to achieve a high injection efficiency and low threshold current density.The simulation values of the device threshold current density Jth are 6.47 kA/cm^2（temperature：200 K,and λ=2050 nm）,10.75 kA/cm^2（temperature：200 K,and λ=2000 nm）,and23.12 kA/cm^2（temperature：300 K,and λ=2100 nm）,respectively.The results indicate the possibility to obtain a Si-based short-wave infrared Ge1-xSnx laser.

关 键 词：infrared GeSn alloys semiconductor lasers OPTOELECTRONIC 

分 类 号：TN24[电子电信—物理电子学]