Effects of in-plane stiffness and charge transfer on thermal expansion of monolayer transition metal dichalcogenide  被引量:1

Effects of in-plane stiffness and charge transfer on thermal expansion of monolayer transition metal dichalcogenide

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作  者:王占雨 周艳丽 王雪青 王飞 孙强 郭正晓 贾瑜 

机构地区:[1]International Joint Research Laboratory for Quantum Functional Materials of Henan,Zhengzhou University [2]School of Physics and Engineering,Zhengzhou University [3]Department of Mechanical and Electrical Engineering,Henan Industry and Trade Vocational College [4]Department of Chemistry,University College London

出  处:《Chinese Physics B》2015年第2期343-349,共7页中国物理B(英文版)

基  金:supported by the National Natural Science Foundation of China(Grant Nos.11274280 and 11104254);the National Basic Research Program of China(Grant No.2012CB921300)

摘  要:The temperature dependence of lattice constants is studied by using first-principles calculations to determine the effects of in-plane stiffness and charge transfer on the thermal expansions of monolayer semiconducting transition metal dichalcogenides.Unlike the corresponding bulk material,our simulations show that monolayer MX2(M = Mo and W;X = S,Se,and Te) exhibits a negative thermal expansion at low temperatures,induced by the bending modes.The transition from contraction to expansion at higher temperatures is observed.Interestingly,the thermal expansion can be tailored regularly by alteration of the M or X atom.Detailed analysis shows that the positive thermal expansion coefficient is determined mainly by the in-plane stiffness,which can be expressed by a simple relationship.Essentially the regularity of this change can be attributed to the difference in charge transfer between the different elements.These findings should be applicable to other two-dimensional systems.The temperature dependence of lattice constants is studied by using first-principles calculations to determine the effects of in-plane stiffness and charge transfer on the thermal expansions of monolayer semiconducting transition metal dichalcogenides.Unlike the corresponding bulk material,our simulations show that monolayer MX2(M = Mo and W;X = S,Se,and Te) exhibits a negative thermal expansion at low temperatures,induced by the bending modes.The transition from contraction to expansion at higher temperatures is observed.Interestingly,the thermal expansion can be tailored regularly by alteration of the M or X atom.Detailed analysis shows that the positive thermal expansion coefficient is determined mainly by the in-plane stiffness,which can be expressed by a simple relationship.Essentially the regularity of this change can be attributed to the difference in charge transfer between the different elements.These findings should be applicable to other two-dimensional systems.

关 键 词:transition metal dichalcogenide thermal expansion PHONON 

分 类 号:O469[理学—凝聚态物理]

 

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