Influence of interface within the composite barrier on the tunneling electroresistance of ferroelectric tunnel junctions with symmetric electrodes  

作　　者：王品之 朱素华 潘涛 吴银忠 

机构地区：[1]Physics Department,Soochow University [2]Physics Department,Changshu Institute of Technology [3]School of Mathematics and Physics,Suzhou University of Science and Technology

出　　处：《Chinese Physics B》2015年第2期372-375,共4页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.11274054);the Open Project of Jiangsu Provincial Laboratory of Advanced Functional Materials,China(Grant No.12KFJJ005)

摘　　要：The interface with a pinned dipole within the composite barrier in a ferroelectric tunnel junction（FTJ） with symmetric electrodes is investigated.Different from the detrimental effect of the interface between the electrode and barrier in previous studies,the existence of an interface between the dielectric SrTiO_3 slab and ferroelectric BaTiO_3 slab in FTJs will enhance the tunneling electroresistance（TER） effect.Specifically,the interface with a lower dielectric constant and larger polarization pointing to the ferroelectric slab favors the increase of TER ratio.Therefore,interface control of high performance FTJ can be achieved.The interface with a pinned dipole within the composite barrier in a ferroelectric tunnel junction（FTJ） with symmetric electrodes is investigated.Different from the detrimental effect of the interface between the electrode and barrier in previous studies,the existence of an interface between the dielectric SrTiO_3 slab and ferroelectric BaTiO_3 slab in FTJs will enhance the tunneling electroresistance（TER） effect.Specifically,the interface with a lower dielectric constant and larger polarization pointing to the ferroelectric slab favors the increase of TER ratio.Therefore,interface control of high performance FTJ can be achieved.

关 键 词：ferroelectric tunnel junction interface effect tunneling electroresistance 

分 类 号：O441.1[理学—电磁学]