Mapping an on-chip terahertz antenna by a scanning near-field probe and a fixed field-effect transistor  

作　　者：吕利 孙建东 Roger A.Lewis 孙云飞 吴东岷 蔡勇 秦华 

机构地区：[1]Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences [2]Graduate University of Chinese Academy of Sciences [3]Institute for Superconducting and Electronic Materials and School of Physics,University of Wollongong,Wollongong [4]i-Lab,Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2015年第2期485-489,共5页中国物理B（英文版）

基　　金：partially supported by the Knowledge Innovation Program of the Chinese Academy of Sciences(Grant No.KJCX2-EW-705);China Postdoctoral Science Foundation(Grant No.2014M551678);Jiangsu Planned Projects for Postdoctoral Research Funds(Grant No.1301054B);Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YZ201152);the National Natural Science Foundation of China(Grant No.61271157);Suzhou Science and Technology Project(Grant No.ZXG2012024);the Chinese Academy of Sciences Visiting Professorship for Senior International Scientists(Grant No.2010T2J07)

摘　　要：In the terahertz（THz） regime,the active region for a solid-state detector usually needs to be implemented accurately in the near-field region of an on-chip antenna.Mapping of the near-field strength could allow for rapid verification and optimization of new antenna/detector designs.Here,we report a proof-of-concept experiment in which the field mapping is realized by a scanning metallic probe and a fixed AlGaN/GaN field-effect transistor.Experiment results agree well with the electromagnetic-wave simulations.The results also suggest a field-effect THz detector combined with a probe tip could serve as a high sensitivity THz near-field sensor.In the terahertz（THz） regime,the active region for a solid-state detector usually needs to be implemented accurately in the near-field region of an on-chip antenna.Mapping of the near-field strength could allow for rapid verification and optimization of new antenna/detector designs.Here,we report a proof-of-concept experiment in which the field mapping is realized by a scanning metallic probe and a fixed AlGaN/GaN field-effect transistor.Experiment results agree well with the electromagnetic-wave simulations.The results also suggest a field-effect THz detector combined with a probe tip could serve as a high sensitivity THz near-field sensor.

关 键 词：terahertz detector terahertz antenna near-field probe high electron mobility transistor 

分 类 号：TN386[电子电信—物理电子学] TP393.11[自动化与计算机技术—计算机应用技术]