Performance improvement of Ga N-based light-emitting diodes transferred from Si(111) substrate onto electroplating Cu submount with embedded wide p-electrodes  

作　　者：柳铭岗 王云茜 杨亿斌 林秀其 向鹏 陈伟杰 韩小标 臧文杰 廖强 林佳利 罗慧 吴志盛 刘扬 张佰君 

机构地区：[1]State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-sen University

出　　处：《Chinese Physics B》2015年第3期428-433,共6页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.61274039 and 51177175);the National Basic Research Program of China(Grant Nos.2010CB923201 and 2011CB301903);the Ph.D. Program Foundation of Ministry of Education of China(Grant No.20110171110021);the Foundation of the Key Technologies R&D Program of Guangdong Province,China(Grant No.2010A081002005)

摘　　要：Crack-free Ga N/In Ga N multiple quantum wells（MQWs） light-emitting diodes（LEDs） are transferred from Si substrate onto electroplating Cu submount with embedded wide p-electrodes. The vertical-conducting n-side-up configuration of the LED is achieved by using the through-hole structure. The widened embedded p-electrode covers almost the whole transparent conductive layer（TCL）, which could not be applied in the conventional p-side-up LEDs due to the electrodeshading effect. Therefore, the widened p-electrode improves the current spreading property and the uniformity of luminescence. The working voltage and series resistance are thereby reduced. The light output of embedded wide p-electrode LEDs on Cu is enhanced by 147% at a driving current of 350 m A, in comparison to conventional LEDs on Si.Crack-free Ga N/In Ga N multiple quantum wells（MQWs） light-emitting diodes（LEDs） are transferred from Si substrate onto electroplating Cu submount with embedded wide p-electrodes. The vertical-conducting n-side-up configuration of the LED is achieved by using the through-hole structure. The widened embedded p-electrode covers almost the whole transparent conductive layer（TCL）, which could not be applied in the conventional p-side-up LEDs due to the electrodeshading effect. Therefore, the widened p-electrode improves the current spreading property and the uniformity of luminescence. The working voltage and series resistance are thereby reduced. The light output of embedded wide p-electrode LEDs on Cu is enhanced by 147% at a driving current of 350 m A, in comparison to conventional LEDs on Si.

关 键 词：light-emitting diodes embedded wide p-electrodes Si substrate electroplating Cu submount 

分 类 号：TN312.8[电子电信—物理电子学] TN304.21