溅射氩气压对射频磁控溅射制备ZnO∶Al薄膜性能的影响  

Influence of the deposition pressure on the properties of ZnO∶Al thin-film produced by RF sputtering

作　　者：刘超英[1,2,3] 陈玮[1,2] 徐志伟[1,2] 付静[1,3] 左岩[1,2] 马眷荣[1] 

机构地区：[1]中国建筑材料科学研究总院,北京100024 [2]国家玻璃深加工工程技术中心,北京100024 [3]绿色建筑材料国家重点实验室,北京100024

出　　处：《功能材料》2015年第7期7052-7055,共4页Journal of Functional Materials

基　　金：十二五国家科技支撑计划资助项目(2011BAJ04B04)

摘　　要：采用磁控溅射方法在玻璃衬底上使用掺杂3％（质量分数）Al2 O 3的 ZnO 陶瓷靶材制备出了掺铝氧化锌（ZnO ∶ Al,AZO）透明导电薄膜.分别用XRD、SEM、四探针测试仪、紫外-可见分光光度计对薄膜的性能进行了表征和分析.研究了溅射过程中不同氩气压强（0．3-1．2 Pa）对薄膜结构、形貌及光电性能的影响.XRD 测试结果表明,所制备的薄膜均具有呈c 轴择优取向的纤锌矿结构.当氩气压强为0．3 Pa时,AZO 薄膜的电阻率最低为6．72×10^-4Ω·cm.所有样品在可见光波段的平均透过率超过85％.Transparent conductive aluminum-doped zinc oxide(AZO)films were deposited on glass substrates by RF magnetron sputtering from ZnO∶3wt% Al2O3 ceramic target.The films obtained were characterized and analyzed by XRD,SEM,four-point probes,ultraviolet-visible light spectrophotometer.The dependence of argon gas pressure on the structure,morphology,electrical and optical properties were investigated.The argon sputtering pressure was varied between 0.3and 1.2Pa.The XRD analysis indicated that AZO films deposited under various argon gas pressures were a polycrystalline wurtzite structure with a[002]preferred orientation.The lowest resistivity was 6.7×10-4Ω·cm(sheet resistance=11.2Ω/□for a thickness=600nm)which was obtained at an argon sputtering pressure of 0.3Pa.The average transmittance was over 85% in the visible range for all samples.

关 键 词：氩气压力 射频磁控溅射 AZO 薄膜 光电性能 

分 类 号：TB34[一般工业技术—材料科学与工程]