IGBT功率模块键合线故障下的温度特性研究  

The Research About Temperature Characteristics of IGBT Power Modules Under the Bonding Wires Failure

作　　者：禹鑫[1] 杜明星[1] 窦汝振[2] 魏克新[1] 

机构地区：[1]天津市复杂系统控制理论及应用重点实验室,天津理工大学,天津300384 [2]中国汽车技术研究中心,天津300300

出　　处：《电力电子技术》2015年第2期55-57,共3页Power Electronics

基　　金：国家科技支撑计划课题(2013BAG01B00)~~

摘　　要：针对IGBT功率模块不断承受温度变化和功率循环后导致的键合线脱落(典型故障之一),基于红外探测法和热电阻接触测温法,研究了IGBT模块键合线故障下从芯片到底板的稳态热阻抗、芯片温场分布和温度变化。研究表明:键合线脱落不会影响IGBT模块从芯片到底板的稳态热阻抗值;键合线脱落后,芯片表面温场分布不均且芯片中心温度变化率增大。这些温度变化特性均可作为诊断键合线故障的重要依据。For one of the typical faults of IGBT power modules caused by temperature changes and power cycling,bonding wires off,based on the infrared detection mediod and the thermal resistance method of the temperature measurement,the equivalent thermal impedance between case and junction,the temperature distribution and temperature changes after the bonding wires fault of IGBT modules are stuthed.The results show that;bonding wires off will not affect the thermal impedance of IGBT between junction and plate under steady-state conditions;after bonding wires off,the temperature field at the chip surface is uneven distribution and the temperature variation rate at the center of chip increases.These character-istics of temperature can be used as important bases for diagnostic of bonding wires fault.

关 键 词：绝缘栅双极型晶体管 键合线故障 温度特性 

分 类 号：TN3[电子电信—物理电子学]