Ge surface passivation by GeO_2 fabricated by N_2O plasma oxidation  

作　　者：LIN Meng AN Xia LI Ming YUN QuanXin LI Min LI Zhi Qiang LIU PengQiang ZHANG Xing HUANG Ru 

机构地区：[1]Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics,Peking University

出　　处：《Science China(Information Sciences)》2015年第4期139-143,共5页中国科学（信息科学）（英文版）

基　　金：supported in part by National Basic Research Program of China (973) (Grant No.2011CBA00601);National Natural Science Foundation of China (Grant Nos. 60625403, 60806033, 60925015);National Science & Technology Major Project 02 (Grant No. 2009ZX02035-001)

摘　　要：In this paper, Ge surface passivation by GeO2 grown by N2O plasma oxidation is presented and experimentally demonstrated. Results show that stoichiometrically GeO2 can be achieved by N2O plasma oxidation at 350℃. The transmission electron microscope observation reveals that the GeO2/Ge interface is automatically smooth and the thickness of GeO2 is ~0.9 nm with 120 s N2O plasma oxidation. The interface state density of Ge surface after N2O plasma passivation is about ~ 3×10^11 cm^-2eV-1. With GeO2 passivation, the hysteresis of MOS capacitor with A1203 as gate dielectric is reduced to ~55 mV, compared to 130 mV of the untreated one. The Fermi-level at GeO2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage, which is promising for high performance NMOSFETs fabrication.In this paper, Ge surface passivation by GeO2 grown by N2O plasma oxidation is presented and experimentally demonstrated. Results show that stoichiometrically GeO2 can be achieved by N2O plasma oxidation at 350℃. The transmission electron microscope observation reveals that the GeO2/Ge interface is automatically smooth and the thickness of GeO2 is ~0.9 nm with 120 s N2O plasma oxidation. The interface state density of Ge surface after N2O plasma passivation is about ~ 3×10^11 cm^-2eV-1. With GeO2 passivation, the hysteresis of MOS capacitor with A1203 as gate dielectric is reduced to ~55 mV, compared to 130 mV of the untreated one. The Fermi-level at GeO2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage, which is promising for high performance NMOSFETs fabrication.

关 键 词：Ge PASSIVATION GeO2 N2O plasma oxidation 

分 类 号：TN386[电子电信—物理电子学]