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机构地区:[1]Department of Microwave IC,Institute of Microelectronics,Chinese Academy of Sciences [2]School of Electronic Engineering,University of Electronic Science and Technology of China
出 处:《Chinese Physics Letters》2015年第2期31-34,共4页中国物理快报(英文版)
基 金:Supported by the National High-Technology Research and Development Program of China under Grant No 2011AA010203;the National Basic Research Program of China under Grant Nos 2011CB201704 and 2010CB327502;the National Natural Science Foundation of China under Grant Nos 61434006 and 61106074
摘 要:A 330-500 GHz zero-biased broadband monolithic integrated tripler is reported. The measured results show that the maximum efficiency and the maximum output power are 2% and 194μW at 348 GHz. The saturation characteristic test shows that the output i dB compression point is about -8.5 dBm at 334 GHz and the maximum efficiency is obtained at the point, which is slightly below the 1 dB compression point. Compared with the conventional hybrid integrated circuit, a major advantage of the monolithic integrated circuit is the significant improvement of reliability and consistency. In this work, a terahertz monolithic frequency multiplier at this band is designed and fabricated.A 330-500 GHz zero-biased broadband monolithic integrated tripler is reported. The measured results show that the maximum efficiency and the maximum output power are 2% and 194μW at 348 GHz. The saturation characteristic test shows that the output i dB compression point is about -8.5 dBm at 334 GHz and the maximum efficiency is obtained at the point, which is slightly below the 1 dB compression point. Compared with the conventional hybrid integrated circuit, a major advantage of the monolithic integrated circuit is the significant improvement of reliability and consistency. In this work, a terahertz monolithic frequency multiplier at this band is designed and fabricated.
关 键 词:InP InGaAs A 330-500 GHz Zero-Biased Broadband Tripler Based on Terahertz Monolithic Integrated Circuits dBm SBD
分 类 号:TN771[电子电信—电路与系统]
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