Lateral-Coupled Junctionless IZO-Based Electric-Double-Layer Thin-Film Transistors Gated by Solid-State Phosphorosilicate Glass Electrolyte  

作　　者：周菊枚 高晓红 张洪亮 

机构地区：[1]School of Mechanical and Electronic Engineering, Ningbo Dahongying University, Ningbo 315175 [2]Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201

出　　处：《Chinese Physics Letters》2015年第3期149-152,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 51302276 and 51301043;the Ningbo Natural Science Foundation under Grant No 2013A610129

摘　　要：We describe the lateral-coupled junctionless indium-zinc-oxide （IZO） thin-film transistors （TFTs） in which there are no junctions between channel and source/drain electrodes and with solid-state phosphorosilieate glass electrolyte （PSG） gating. Due to the three-dimensional high proton conduction and lateral coupled electric-double- layer （EDL） capacitance （〉 1 #Flora2） of the PSG, the low voltage （2.0 V） junctionless IZO TFTs and the dual eoplanar gate devices are obtained. An AND logic function is demonstrated on the basis of the junctionless EDL-TFTs. Such devices are promising for applications in pH sensors, humidity sensors, biosensors, and neuron network simulation.We describe the lateral-coupled junctionless indium-zinc-oxide （IZO） thin-film transistors （TFTs） in which there are no junctions between channel and source/drain electrodes and with solid-state phosphorosilieate glass electrolyte （PSG） gating. Due to the three-dimensional high proton conduction and lateral coupled electric-double- layer （EDL） capacitance （〉 1 #Flora2） of the PSG, the low voltage （2.0 V） junctionless IZO TFTs and the dual eoplanar gate devices are obtained. An AND logic function is demonstrated on the basis of the junctionless EDL-TFTs. Such devices are promising for applications in pH sensors, humidity sensors, biosensors, and neuron network simulation.

关 键 词：PSG Lateral-Coupled Junctionless IZO-Based Electric-Double-Layer Thin-Film Transistors Gated by Solid-State Phosphorosilicate Glass Electrolyte EDL 

分 类 号：TN321.5[电子电信—物理电子学]