一种高温度性能的带隙基准源  

A Bandgap Reference with High Temperature Performance

作　　者：贺炜[1] 冯全源[1] 

机构地区：[1]西南交通大学微电子研究所,成都610031

出　　处：《电子器件》2015年第1期18-22,共5页Chinese Journal of Electron Devices

基　　金：国家自然科学基金项目(61271090);国家"863"计划项目(2012AA012305)

摘　　要：基于OKI 0.5μm Bi CMOS工艺,设计了一种低温漂的带隙基准电压源。对传统基准源的电压模式输出级进行了改进,使之形成同时包含电压模式和电流模式的混合模式输出级,提高了温度补偿的灵活性。同时设计了一种基于分段线性补偿技术的高精度曲率校正电路,精确地对基准电压的高阶温度分量进行修调。HSPICE仿真结果表明,在5 V的电源电压下,基准输出电压为1.215 6 V,在-40℃~125℃温度范围内,基准电压的温度系数为0.43×10-6/℃,低频时电路电源抑制比低于-83 d B。电源电压在3.8 V^10 V范围内变化时,基准源的线性调整率为9.2μV/V。A bandgap voltage reference with low temperature-drift was proposed based on OKI 0. 5 μm Bi CMOS process. The voltage-mode output stage of traditional reference was improved and a mixed-mode output stage which comprised both voltage and current modes was introduced. Thus the flexibility of temperature compensation was improved. Meanwhile a high-precision curvature correction circuit based on piecewise linear compensation technology was designed to trim the high-order temperature components of the reference voltage. Simulation using HSPICE software showed that,the output reference voltage was 1. 2156 V under the 5 V power supply and its temperature coefficient was 0. 43 ×10-6/ ℃ at the range of-40 ℃ - 125 ℃. The power supply rejection ratio（ PSRR） was lower than-83 d B at low frequency. Line regulation in the supply range of 3. 8 V - 10 V was 9. 2 μV / V.

关 键 词：带隙基准 混合模式 曲率校正 低温漂 

分 类 号：TN433[电子电信—微电子学与固体电子学]