Voltage assisted control of spin-transfer nano-oscillators  

作　　者：Bahniman Ghosh Gaurav Solanki 

机构地区：[1]Microelectronics Research Center,University of Texas at Austin [2]Department of Electrical Engineering,Indian Institute of Technology Kanpur

出　　处：《Journal of Semiconductors》2015年第3期65-68,共4页半导体学报（英文版）

摘　　要：The spin-transfer nano-oscillator （STNO） has recently acquired a huge amount of research interest, due to its promising easy tunability along with the miniature size. The output frequency control of an STNO through magnetic field and current has been examined almost to its full extent; however, there are issues that still need to be addressed. Here, we propose a novel way of voltage control of the output frequency of an STNO, and alongside reducing its power requirement.The spin-transfer nano-oscillator （STNO） has recently acquired a huge amount of research interest, due to its promising easy tunability along with the miniature size. The output frequency control of an STNO through magnetic field and current has been examined almost to its full extent; however, there are issues that still need to be addressed. Here, we propose a novel way of voltage control of the output frequency of an STNO, and alongside reducing its power requirement.

关 键 词：spin-transfer nano-oscillator voltage controlled magnetic anisotropy tunnelling magnetoresistance 

分 类 号：TN752[电子电信—电路与系统] TM714.3[电气工程—电力系统及自动化]