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机构地区:[1]School of Physics and Engineering, Sun Yat-Sen University [2]INSPUR GROUP Shandong Inspur Huaguang Optoelectronics Co., Ltd [3]State Key Laboratory of Crystal Material, Shandong University
出 处:《Journal of Semiconductors》2015年第2期106-110,共5页半导体学报(英文版)
基 金:Project supported by the Post Doctoral Innovation Fund of Shandong Province(No.201303002);the Shandong Province Young and MiddleAged Scientists Research Awards Fund(No.BS2013DX007);the the National Basic Research Program of China(No.6131550102)
摘 要:We demonstrate and introduce here a pyramidally patterned metal reflector into wafer-bonding AlGaInP light emitting diodes (LEDs) to improve the light extraction efficiency by using a photo-assisted chemical etched GaP:Mg layer. The pyramid patterns were fabricated employing a HF and H202 mixed solution in combination with a 532 nm laser on a GaP:Mg surface firstly, and then a gold reflector layer was evaporated onto the patterned GaP:Mg surface. After the whole chip process, the patterned gold reflector structure was confirmed to be efficient for light extraction and a 18.55% enhancement of the electroluminescent flux has been obtained by an integrating sphere, compared to the surface textured LEDs with flat reflectors.We demonstrate and introduce here a pyramidally patterned metal reflector into wafer-bonding AlGaInP light emitting diodes (LEDs) to improve the light extraction efficiency by using a photo-assisted chemical etched GaP:Mg layer. The pyramid patterns were fabricated employing a HF and H202 mixed solution in combination with a 532 nm laser on a GaP:Mg surface firstly, and then a gold reflector layer was evaporated onto the patterned GaP:Mg surface. After the whole chip process, the patterned gold reflector structure was confirmed to be efficient for light extraction and a 18.55% enhancement of the electroluminescent flux has been obtained by an integrating sphere, compared to the surface textured LEDs with flat reflectors.
关 键 词:pyramidally patterned reflector light emitting diodes wafer-bonding light extraction efficiency
分 类 号:TN312.8[电子电信—物理电子学] TU972.9[建筑科学—建筑设计及理论]
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