Low phase noise GaAs HBT VCO in Ka-band  

作　　者：严婷 张玉明 吕红亮 张义门 武岳 刘一峰 

机构地区：[1]School of Microelectronics, Xidian University, Key Laboratory of Wide-Gap Semiconductor Materials and Devices

出　　处：《Journal of Semiconductors》2015年第2期120-123,共4页半导体学报（英文版）

基　　金：Project supported by the National Key Basic Research Program of China(No.2010CB327505);the Advanced Research Project(No.51308xxxx06);the Advanced Research Foundation(No.9140A08xxxx11DZ111)

摘　　要：Design and fabrication of a Ka-band voltage-controlled oscillator（VCO） using commercially available 1-μm GaAs heterojunction bipolar transistor technology is presented.A fully differential common-emitter configuration with a symmetric capacitance with a symmetric inductance tank structure is employed to reduce the phase noise of the VCO,and a novel π-feedback network is applied to compensate for the 180° phase shift.The on-wafer test shows that the VCO exhibits a phase noise of-96.47 dBc/Hz at a 1 MHz offset and presents a tuning range from 28.312 to 28.695 GHz.The overall dc current consumption of the VCO is 18 mA with a supply voltage of-6 V.The chip area of the VCO is 0.7×0.7 mm^2.Design and fabrication of a Ka-band voltage-controlled oscillator（VCO） using commercially available 1-μm GaAs heterojunction bipolar transistor technology is presented.A fully differential common-emitter configuration with a symmetric capacitance with a symmetric inductance tank structure is employed to reduce the phase noise of the VCO,and a novel π-feedback network is applied to compensate for the 180° phase shift.The on-wafer test shows that the VCO exhibits a phase noise of-96.47 dBc/Hz at a 1 MHz offset and presents a tuning range from 28.312 to 28.695 GHz.The overall dc current consumption of the VCO is 18 mA with a supply voltage of-6 V.The chip area of the VCO is 0.7×0.7 mm^2.

关 键 词：VCO GaAs HBT common-emitter phase noise π-feedback 

分 类 号：TN322.8[电子电信—物理电子学]