化学法在Ni-5%W基底上制备Gd掺杂CeO_2膜  

Preparation of Gd Doped CeO_2 Films on Ni-5%W Substrate by a Chemical Method

作　　者：李英楠[1] 李凤华[1] 罗清威[1] 樊占国[1] 李成山[2] 卢亚峰[2] 

机构地区：[1]东北大学,辽宁沈阳110004 [2]西北有色金属研究院,陕西西安710016

出　　处：《稀有金属材料与工程》2015年第2期443-446,共4页Rare Metal Materials and Engineering

基　　金：中央高校基本科研业务费专项资金项目(N110302006)

摘　　要：用化学法在Ni-5%W基底上制备Gd掺杂Ce O2膜。以乙酸铈((CH3CO2)3Ce(III))、硝酸钆(Gd N3O9)为起始原料,按照阳离子Ce3+:Gd3+为4:1的比例溶解于丙酸(C2H5COOH)中制成前驱液。将前驱液旋涂在Ni-5%W基底上,在4%H2/Ar气氛下进行1100℃热处理,形成立方织构的Gd掺杂Ce O2膜。采用XRD和SEM对不同旋涂转速工艺制备的Ce O2膜进行晶体结构和微观形貌的检测和分析。以总阳离子浓度为1.2 mol/L前驱液经过3000 r/min,60 s的涂覆工艺,经过二次涂覆和1100℃热处理的Ce O2膜结晶程度高,无裂纹,有立方织构。Ce3+在4%H2/Ar还原性气氛里可以转变为Ce4+。Gd doped Ce O2 films were fabricated on Ni-5%W substrate by a chemical method. Cerium acetate and gadolinium nitrate as initial raw materials were dissolved in propionic acid with the metallic ion molar ratio of 4：1 and the total metal ion concentrations of the coating solutions were 1.2 mol/L, and then the coating solution was obtained. The precursor solution was spin coated on Ni-5%W（001）single crystal substrates. After firing at 1100 oC in 4% H2/Ar atmosphere, the Gd doped Ce O2 films were formed with cubic texture. X-ray diffraction（XRD） scans and scanning electronic microscopy（SEM） were used to investigate crystalline and surface morphology of Ce O2 films prepared by different spin-rotation speeds. By the precursor solution with cation concentration of 1.2 mol/L after the 3000 r/min, 60 s spin-craft, the obtained Ce O2 films show high crystallization, free crack and cubic texture after the second spin and firing at 1100 oC. Ce3＋can be changed to Ce4＋ in 4% H2/Ar atmosphere.

关 键 词：化学法 Ni-5%W基底 掺杂 Ce O2 

分 类 号：TB43[一般工业技术]