陶瓷基Pt/ITO薄膜热电偶的制备与性能研究  

Preparation and properties study of Pt / ITO thin-film thermocouple on ceramic substrates

作　　者：刘海军[1] 蒋洪川[1] 吴勐[1] 赵晓辉[1] 蒋书文[1] 张万里[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《传感器与微系统》2015年第3期18-20,共3页Transducer and Microsystem Technologies

基　　金：四川省青年科技创新团队资助项目(2011JTD0006)

摘　　要：为了准确测量涡轮叶片表面温度,采用掩模图形化和射频磁控溅射的方法,在Al2O3陶瓷基片上沉积Pt/ITO薄膜热电偶,并对其进行了静态标定。结果表明：Pt/ITO薄膜热电偶在1 000℃进行大气气氛退火,随着退火时间的增加,样品热电势输出曲线稳定性逐渐增强,Seebeck系数也较大,标定曲线均具有很好的线性度,退火5h的样品的最大测温误差仅为16.03℃,可在400~1100℃温度范围热循环中稳定工作约20h。ITO薄膜厚度对Pt/ITO薄膜热电偶热电性能几乎没有影响。In order to measure the blade surface temperature precisely,Pt / ITO thin film thermocouples are deposited on Al2O3 ceramic substrates by shadow mask technique and RF magnetron sputtering. The thermoelectric properties of the samples are tested by static calibration. The results show that the stability of thermoelectric power output and the Seebeck coefficient of the thin film thermocouple are gradually improved with the increase of annealing time; calibration curves of all samples are of good linearity; the maximum temperature measurement error of the sample annealed at 5h is only 16. 03 ℃ in the atmosphere,which can work stably at 400~ 1 100 ℃ for 20h.Thickness of ITO thin film has no significant effect on thermal potential output of Pt / ITO film thermocouple.

关 键 词：Pt/ITO薄膜热电偶 射频磁控溅射 静态标定 SEEBECK系数 

分 类 号：TP212.9[自动化与计算机技术—检测技术与自动化装置]