掺杂CuO对(Zr_(0.8)Sn_(0.2))TiO_4陶瓷介电性能的影响  

Effects of CuO on the Dielectric Properties of( Zr_(0.8)Sn_(0.2))TiO_4 Ceramics

作　　者：钟祥清[1] 丁士华[1] 宋天秀[1] 张倩[1] 曾卓玮[1] 

机构地区：[1]西华大学材料科学与工程学院,四川成都610039

出　　处：《西华大学学报（自然科学版）》2015年第2期46-49,共4页Journal of Xihua University:Natural Science Edition

基　　金：西华大学研究生创新基金(YCJJ201303;YCJJ201306)

摘　　要：采用固相反应法制备陶瓷样品,研究掺杂CuO对(Zr0.8Sn0.2)TiO4的微观结构和介电性能的影响。结果表明:掺杂降低了(Zr0.8Sn0.2)TiO4陶瓷的烧结温度,样品能够在1300℃下烧结成瓷,陶瓷密度和介电常数随着CuO的增加而增加,介电损耗随着掺杂量的增加而减少。XRD结果显示:样品的主晶相均为(Zr0.8Sn0.2)TiO4相,ZnO和CuO的质量分数均为1%,烧结温度1350℃时,介电常数为40.5,损耗为0.0004(1MHz),介电性能最佳。Samples were prepared with ceramic processing technology. The effects of ZnO and CuO addition on the microstructures and the dielectric properties of （Zr0.8Sn0.2 ）TiO4 ceramics were investigated. The results show that the sintering temperature of （Zr0.8 Sn0.2 ）TiO4 is reduced to 1300℃. The density and dielectric constant of CuO doped （Zr0. 8 Sn0. 2 ）TiQ ceramics increase with increasing the CuO content, which is opposite to the dielectric loss. XRD results indicate that the sample main crystalline phases are （Zr0.8 Sn0. 2 ） TiQ phase. The dielectric constant value of 40. 5 and dielectric loss value of 0. 0004 （at 1 MHz） are archived by the 1% ZnO and 1% CuO sample sintered at 1350℃.

关 键 词：介电常数 Cu3TiO4 SEM 

分 类 号：TQ174[化学工程—陶瓷工业]