ICP硅深刻蚀槽壁垂直度的研究  

Study on Vertical Degree of ICP Silicon Deep Etching Groove Wall

作　　者：刘方方[1] 展明浩[1,2] 许高斌[1] 黄斌[2] 管朋 

机构地区：[1]合肥工业大学电子科学与应用物理学院安徽省MEMS工程技术研究中心,合肥230009 [2]中国兵器工业集团北方通用电子集团有限公司,安徽蚌埠233042

出　　处：《微纳电子技术》2015年第3期185-190,共6页Micronanoelectronic Technology

基　　金：国家高技术研究发展计划(863计划)资助项目(2013AA041101)

摘　　要：电感耦合等离子体(ICP)刻蚀技术是体硅深加工的一项关键技术。介绍了ICP刻蚀技术的相关概念与方法,在对Si(100)进行大量深刻蚀实验的基础上,深入分析刻蚀∕钝化周期、极板功率、SF6/C4F8气体流量和腔室压力等主要工艺参数对刻蚀侧壁垂直度的影响。通过对ICP刻蚀的刻蚀∕钝化周期和极板功率参数进行正交实验,给出了通用槽宽分别为2,5和10μm时的优化工艺参数,成功实现了三个垂直度达(90±0.02)°、高深宽比≥10、侧壁光滑的深槽结构。将优化后的工艺参数用于某陀螺仪的刻蚀实验,获得了理想的刻蚀形貌。The inductively coupled plasma （ICP） etching technique is one of the key techniques in deep processing of the bulk silicon. The related concepts and methods of ICP etching technique were introduced. Based on a lot of deep etching experiments on Si（100） wafers, the effects of the main process parameters on the etching vertical degree of the sidewall were intensively analyzed, including the etching/passivation cycle, plate power, SF6/C4F8 gas flow rate and chamber pres- sure. Through the orthogonal test about the etching/passivation cycle and plate power in ICP etching process, the optimized processing parameters with 2, 5 and 10 μm of the groove widths were obtained. Three deep grooves with smooth sidewall were successfully realized. The vertical degrees reach （90 ＋ 0.02）° and the high aspect ratios are not less than 10. The optimized process parameters were used in etching a gyroscope to obtain an ideal etching morphology.

关 键 词：电感耦合等离子体(ICP)刻蚀 工艺参数 正交实验 过程优化 刻蚀垂直度 

分 类 号：TN305.7[电子电信—物理电子学]