n-ZnO基异质结发光二极管研究进展  

The Research Progress of n-ZnO Based Heterojunction LED

作　　者：沈耀国[1] 

机构地区：[1]闽江学院物理学与电子信息工程系,福建福州350108

出　　处：《洛阳师范学院学报》2015年第2期52-55,共4页Journal of Luoyang Normal University

摘　　要：p型掺杂Zn O比较困难,使得大家寻求其它p型半导体与n型Zn O构成异质结,以扩大其在电子器件领域的应用.本文主要综述了各种n-Zn O基异质结发光二极管的结构、电特性以及发光特性.常用的p导电物质有Ga N、Si、Mg O、Ni O、聚苯烯(PANI)、Cu SCN等,除了简单的p-Ga N/n-Zn O结构外,通常在该结构中加入低导电率的中间层来调节p-Ga N/n-Zn O界面的能量.另外,Zn O纳米结构的不同形状对器件的性能影响很大,采用不同的合成条件,或者加以退火技术,可以得到性能良好的发光二极管(LEDs).P-doping of Zn O is rather difficult,so that other p-type semiconductors and n type Zn O to fabricate heterojunction,to expand its application in the field of electronic devices. This paper reviews the structures,electrical properties and luminescence properties of various types of n-Zn O based heterojunction LEDs. Commonly used p-type conductive materials include Ga N,Si,Mg O,Ni O,polyaniline（ PANI）,Cu SCN,and etc. In addition to the simple p-Ga N / n-Zn O structure,a middle layer of low conductivity usually is added to regulate energy of pGa N / n-Zn O interface. The performance of the device is affected by the morphology of Zn O nanostructures,and when different synthesis conditions or annealing technology are applied,LEDs of good performance can be manufactured.

关 键 词：异质结 发光二极管 综述 

分 类 号：TN312.8[电子电信—物理电子学] TN364.2