Study of selectively buried ion-exchange glass waveguides using backside masking  

作　　者：裴重阳 王根成 杨冰 杨龙志 郝寅雷 江晓清 杨建义 

机构地区：[1]Department of Information Science and Electronics Engineering, Zhejiang University [2]Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University

出　　处：《Chinese Optics Letters》2015年第2期41-44,共4页中国光学快报（英文版）

基　　金：supported by the Natural Science Foundation of China under Grant Nos.61228501 and 61475137;the National 863 Project of China under Grant No.2012AA012203;the Doctoral Discipline Foundation of Ministry of Education under Grant No.20120101110054

摘　　要：In this Letter, we study the characteristics of a selectively buried glass waveguide that is fabricated by the backside masking method. The results show that the surface region appears when the width of the backside mask is larger than 7 mm. Here, the glass substrate is 1.5 mm thick. It is also found that the buried depth evolution of the transition region remains almost unchanged and is independent of the width of the backside mask. The loss of the transition region is only 0.28 d B at the wavelength of 1.55 μm if the surface condition is good enough.In this Letter, we study the characteristics of a selectively buried glass waveguide that is fabricated by the backside masking method. The results show that the surface region appears when the width of the backside mask is larger than 7 mm. Here, the glass substrate is 1.5 mm thick. It is also found that the buried depth evolution of the transition region remains almost unchanged and is independent of the width of the backside mask. The loss of the transition region is only 0.28 d B at the wavelength of 1.55 μm if the surface condition is good enough.

关 键 词：Ion exchange SUBSTRATES WAVEGUIDES 

分 类 号：TN252[电子电信—物理电子学]