Photovoltaic Properties of Thermally-Grown Selenium-Doped Silicon Photodiodes for Infrared Detection Applications  

作　　者：Oday A. HAMMADI 

机构地区：[1]Department of Physics, College of Education, Al-Iraqia University, Baghdad, Iraq

出　　处：《Photonic Sensors》2015年第2期152-158,共7页光子传感器（英文版）

摘　　要：In this work, the photovoltaic properties of selenium-doped silicon photodiodes were studied. Influence of illumination of the impurity absorption range on the current-voltage and spectral characteristics of the fabricated device were considered. The photoresponse dependencies on the electric intensity, current, and radiation power at the sample were observed. Results obtained in this work showed that the current-sensitivity of the fabricated structures at the forward bias was rather higher than that of photoresistors. The photosensitivity and detectivity were up to 2.85 × 10^- 6 W.Hz^-1/2 and 2.1 × 10^11 cm.Hz^1/2w^-1, respectively.In this work, the photovoltaic properties of selenium-doped silicon photodiodes were studied. Influence of illumination of the impurity absorption range on the current-voltage and spectral characteristics of the fabricated device were considered. The photoresponse dependencies on the electric intensity, current, and radiation power at the sample were observed. Results obtained in this work showed that the current-sensitivity of the fabricated structures at the forward bias was rather higher than that of photoresistors. The photosensitivity and detectivity were up to 2.85 × 10^- 6 W.Hz^-1/2 and 2.1 × 10^11 cm.Hz^1/2w^-1, respectively.

关 键 词：Silicon devices selenium dopant photodiodes photovoltaic properties 

分 类 号：TN364.1[电子电信—物理电子学] TN215