Growth of Erbium Dihydride Films under Low Hydrogen Pressure by Pulsed Laser Deposition  

作　　者：王雪敏 SHEN Changle WANG Yuying PENG Liping LI Weihua YAN Dawei 吴卫东 TANG Yongjian 

机构地区：[1]Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, China Academy of Engineering Physics

出　　处：《Journal of Wuhan University of Technology(Materials Science)》2015年第1期33-36,共4页武汉理工大学学报（材料科学英文版）

基　　金：Funded by the Fund of the Science and Technology on Plasma Physics Laboratory(No.9140C680501110C6803)

摘　　要：Erbium dihydride thin films were prepared by pulsed laser deposition on Si（100） substrates using erbium target under different low hydrogen pressures. The properties of these films were examined by atomic force microscopy, X-ray diffractometer, transmission electron microscopy, and Fourier transform infrared spectroscopy and UV-vis spectroscopy. Surface morphology reveals the smooth surface of these films （RMS： from 0.503 to 2.849 nm）. The presence of obviously-broadened peaks for diffraction planes （111） suggests a presence of very tiny crystallites distributed along a preferred crystallographic orientation. Transmission electron microscopy investigations confirmed the formation of tiny crystallites due to the implantation of erbium ions. Due to the increase of nominal H concentration, the intensity of the broad absorbance from 190-260 nm increased.Erbium dihydride thin films were prepared by pulsed laser deposition on Si（100） substrates using erbium target under different low hydrogen pressures. The properties of these films were examined by atomic force microscopy, X-ray diffractometer, transmission electron microscopy, and Fourier transform infrared spectroscopy and UV-vis spectroscopy. Surface morphology reveals the smooth surface of these films （RMS： from 0.503 to 2.849 nm）. The presence of obviously-broadened peaks for diffraction planes （111） suggests a presence of very tiny crystallites distributed along a preferred crystallographic orientation. Transmission electron microscopy investigations confirmed the formation of tiny crystallites due to the implantation of erbium ions. Due to the increase of nominal H concentration, the intensity of the broad absorbance from 190-260 nm increased.

关 键 词：thin films pulsed laser deposition X-ray diffractometer transmission electron microscopy 

分 类 号：TB383.2[一般工业技术—材料科学与工程]