High Performance of Enhanced Mode Field Effect Transistor and Ultraviolet Sensor Based on ZnO Nanosheet  

基于氧化锌纳米薄片的高性能增强型场效应管和紫外光传感器

作　　者：高志伟[1] 吴昱昆[1] 李俊文[1] 王晓平[1] 

机构地区：[1]中国科学技术大学物理系,合肥230026

出　　处：《Chinese Journal of Chemical Physics》2015年第1期1-5,I0001,共6页化学物理学报（英文）

摘　　要：ZnO nanosheets with thickness of a few nanometers are prepared by vapor transport and condensation method, and their structure and optical properties are well characterized. Field effect transistor （FET） and ultraviolet （UV） sensors are fabricated based on the ZnO nanosheets. Due to the peculiar structure of nanosheet, the FET shows n-type enhanced mode behavior and high electrical performance, and its field-effect mobility and on/off cur- rent ratio can reach 256 cm2/（V.s） and ~10^8, respectively. Moreover, the response of UV sensors can also be remarkably improved to ~3 × 10^8. The results make the ZnO nanosheets be a good material for the applications in nanoelectronic and optoelectronic devices.

关 键 词：ZNO NANOSHEETS Field effect transistor UV sensor 

分 类 号：O[理学]