大功率半导体器件的可靠性评估  

Reliability Evaluation of High Power Semiconductors

作　　者：张明[1] 

机构地区：[1]株洲南车时代电气股份有限公司,湖南株洲412001

出　　处：《大功率变流技术》2015年第1期1-9,共9页HIGH POWER CONVERTER TECHNOLOGY

摘　　要：文章从可靠性的数学、物理基础出发,描述了现代可靠性工程,介绍了功率半导体的可靠性问题。以4045型IGCT器件为例,阐述了3种重要的加速试验,得到了相应的失效率曲线,给出了计算实例。It described the modern reliability engineering based on math and physics. The reliability problems of power semiconductor devices were introduced. Three major acceleration tests were described by means of 4045 IGCT device and related failure rate curves were gained and some calculating instances were given as well.

关 键 词：可靠性 失效率 IGCT 加速试验 

分 类 号：TN306[电子电信—物理电子学]