湿化学法制备硅纳米线阵列及其光电化学产氢性能分析  

Preparation of Silicon Nanowires Array by Wet Chemistry Methods and Photoelectrochemical Hydrogen Generation Performance Analysis

作　　者：廖明佳[1,2] 乔雷[3,2] 肖鹏[2,4] 张云怀[2] 陈刚才[3] 周志恩[3] 贺小兰 揭芳芳 

机构地区：[1]重庆化工职业学院化学工程系,重庆400020 [2]重庆大学化学化工学院,重庆400033 [3]重庆市环境科学研究院,重庆401147 [4]重庆大学物理学院,重庆400033

出　　处：《无机化学学报》2015年第3期439-445,共7页Chinese Journal of Inorganic Chemistry

基　　金：重庆市教委科学技术研究(No.KJ133801)资助项目

摘　　要：为了探究不同方法条件下制备的硅纳米线阵列电极产氢性能异同,文中分别采用了两步金属辅助催化无电刻蚀法、一步金属辅助催化无电刻蚀法以及阳极氧化法来制备硅纳米线阵列用作为光电分解水电池光阴极材料。通过FESEM、XRD和UVVis-IR DRS等手段对实验样品的形貌、晶型、减反性表征,发现相比于其他2种方法所得硅纳米线样品,两步金属辅助催化无电刻蚀法制备的硅纳米线结构晶型保持更好,表面缺陷更少。光电化学测试表明两步金属辅助催化无电刻蚀法制备的硅纳米线光电化学性能表现最优,其光电流密度值是一步法的4倍,阳极氧化法的40倍;转移电荷电阻仅是一步法制备的硅纳米线阵列阻值的1/3,阳极氧化法制备的1/1 000。To explore the similarities and differences of hydrogen generation performance of silicon nanowires array（Si NWs array） photocathode prepared by different methods, we adopted two-step metal-catalyzed electroless etching method（TMCEE）, one-step metal-catalyzed electroless etching method（OMCEE） and anodic oxidation etching method（AOE） to fabricate silicon nanowires array as a photocathode material for photoelectrochemical hydrogen generation. Comparing with morphology, crystalline, anti-reflection characterization by FESEM, XRD and UV-Vis-IR DRS means, Si NWs array by TMCEE maintained better crystal structure and less surface defects than the samples prepared by the other two methods. Photoelectrochemical tests showed that the performance of Si NWs array by TMCEE was optimal. The photocurrent density value of Si NWs array by TMCEE was 4 times than the one by OMCEE, and 40 times than the one by AOE. The charge transfer resistance of Si NWs array by TMCEE was only 1/3 of SiNWs array by OMCEE, and 1/1 000 of Si NWs array by AOE.

关 键 词：硅纳米线阵列 金属辅助催化无电刻蚀法 光电化学产氢 

分 类 号：O614.411[理学—无机化学]