Ⅲ-族氮化物半导体的研究进展  

Research Progress on Ⅲ-Nitride Semiconductors

作　　者：韩波[1] 李钟玉[1] 兰云军[1] 

机构地区：[1]温州大学化学与材料工程学院,浙江温州325035

出　　处：《化工技术与开发》2015年第3期23-30,共8页Technology & Development of Chemical Industry

摘　　要：近年来,Ⅲ-族氮化物材料引起了科学工作者的极大兴趣,并取得了重大的进展。本文介绍了Ⅲ-族氮化物材料和器件的发展,评述了Ⅲ-族氮化物的掺杂和Ⅲ-族氮化物合金的研究现状。最后,简要展望了Ⅲ-族氮化物未来的应用潜能。Ⅲ -nitride semiconductor materials had received the scientific researchers＇ attention and obtained dramatically development in recent years. In this paper, the development of Ⅲ -nitride materials and devices were introduced. The research situation on doping of Ⅲ -nitride and alloys of Ⅲ -nitride were reviewed. Finally, potential application of Ⅲ -nitride in the future was briefly predict.

关 键 词：Ⅲ-族氮化物 半导体 研究进展 

分 类 号：TN304.23[电子电信—物理电子学]