铜薄膜上喷雾热解法制备CuInS_2薄膜  

Synthesis of CuInS_2 by Spray Pyrolysis and Characterization of Its Properties

作　　者：刘伟[1] 彭香艺 莫晓亮[1] 陈国荣[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《真空科学与技术学报》2015年第3期349-353,共5页Chinese Journal of Vacuum Science and Technology

基　　金：高等学校博士学科点专项科研基金(20110071120007)

摘　　要：采用在真空蒸镀的Cu薄膜上喷雾热解InCl3和SC(NH2)2前驱液的方法,制备出CuInS2(CIS)薄膜。通过X射线衍射、紫外-可见分光光度计、扫描电子微镜和霍尔效应测试仪等仪器对薄膜进行了表征。研究表明,该方法制备出的CIS薄膜,表面均匀且无裂纹缺陷,薄膜内不存在CuxS、In2O3、In2S3等杂相。CIS薄膜为黄铜矿结构,可见光范围内吸收系数达到105cm-1。厚度506nm的CIS薄膜的禁带宽度为1.54eV。电阻率和载流子浓度分别达到10-1Ω·cm和1019cm-3,为p型半导体薄膜。The CuInS_2（CIS） coatings, an absorption material for fabrication of solar cells, were synthesized by spray pyrolysis of an aqueous precursor of InCl_3 and thiourea, on the Cu layers grown by vacuum evaporation on glass substrate. The microstructures and properties of the CIS coatings were characterized with X-ray diffraction, ultraviolet-visible spec- troscopy, scanning electron microscope,and Hall-effect measurement. The results show that high quality CIS coatings with favorable properties can be deposited by the newly-developed technique. For example, the chalcopyrite-phased CIS coat- ings contained no impurity phases, such as CuxS, In_2O_3 and In_2S_3. The absorption coefficient of the smooth, uniform, crack-free,p-type CIS coatings was found to be up to 10^5 cm^-1 in the visible range.The band-gap of a 506 mn thick CIS coating was estimated to be 1.54 eV. Its resistivity and carrier concentration were 10^-1 Ω·cm and 10^19 cm^-3, respective- ly. Much work remains to be done to reduce its carrier concentration below that required by solar cell fabrication.

关 键 词：CuInS_2薄膜 前驱液 喷雾热解法 真空蒸镀 

分 类 号：TM914.42[电气工程—电力电子与电力传动]