Influence of Working Pressure on Ion Sensitive Probe Measurement in Microwave ECR Plasmas  

Influence of Working Pressure on Ion Sensitive Probe Measurement in Microwave ECR Plasmas

在线阅读下载全文

作  者:马志斌 吴俊 谭必松 沈武林 潘鑫 汪建华 

机构地区:[1]Province Key Laboratory of Plasma Chemistry and Advanced Materials,School of Materials Science and Engineering,Wuhan Institute of Technology

出  处:《Plasma Science and Technology》2015年第4期294-297,共4页等离子体科学和技术(英文版)

基  金:supported by National Natural Science Foundation of China(No.10875093)

摘  要:In order to precisely measure the ion parameters in a microwave electron cyclotron resonance plasma using an ion sensitive probe,the dependences of the current-voltage(I-V)characteristics on the shielding height(h)and the potential difference between inner and outer electrodes(V_B)have been investigated at different working pressures of 0.03 Pa and 0.8 Pa.Results show that the I-V curves at higher pressure are more sensitive to the variation of h than those at lower pressure.The influence of V_B on ion temperature(T_i)measurement becomes more prominent when the pressure is increased from 0.03 Pa to 0.8 Pa.Under both pressures,the optimized h is obtained at the condition where the current reaches zero in the positive voltage region with a suitable V_B of-1.5 V because of effective shielding of the electron E×B drift.In order to precisely measure the ion parameters in a microwave electron cyclotron resonance plasma using an ion sensitive probe,the dependences of the current-voltage(I-V)characteristics on the shielding height(h)and the potential difference between inner and outer electrodes(V_B)have been investigated at different working pressures of 0.03 Pa and 0.8 Pa.Results show that the I-V curves at higher pressure are more sensitive to the variation of h than those at lower pressure.The influence of V_B on ion temperature(T_i)measurement becomes more prominent when the pressure is increased from 0.03 Pa to 0.8 Pa.Under both pressures,the optimized h is obtained at the condition where the current reaches zero in the positive voltage region with a suitable V_B of-1.5 V because of effective shielding of the electron E×B drift.

关 键 词:working pressure ion sensitive probe ion temperature plasma 

分 类 号:O53[理学—等离子体物理]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象