1110nm Nd:GGG激光器与555nm倍频激光器  

Nd:GGG laser at 1 110 nm and frequency-doubled laser at 555 nm

作　　者：周景涛[1] 黄敬霞[2] 李莉[2] 

机构地区：[1]军械工程学院车辆与电气工程系,河北石家庄050003 [2]军械工程学院光学与电子工程系,河北石家庄050003

出　　处：《红外与激光工程》2015年第3期867-871,共5页Infrared and Laser Engineering

基　　金：国家自然科学基金(11004122)

摘　　要：采用紧凑的直腔设计和精确的膜系设计,实现了LD侧面泵浦1 110 nm Nd:GGG和腔内倍频的555 nm激光。当泵浦功率为168 W时,得到了25.5 W的1110 nm连续激光输出。在10 k Hz的声光调Q情况下,应用II类非临界相位匹配LiB3O5(LBO)倍频晶体,得到了最大输出功率为3.1 W的555 nm倍频光输出,光-光转换效率为1.8%,相应的脉冲宽度为176 ns,在水平和竖直方向上的M2因子分别为19.6和21.3。A high-power diode-side-pumped 1 110 nm Nd ：GGG laser and a laser at 555 nm based on intracavity frequency doubling of 1 110 nm laser were demonstrated for the first time. A simple straight cavity scheme was employed to achieve a compact configuration and all the coatings were designed specially. A 25.5 W 1 110 nm laser continuous wave output was achieved under the incident pump power of 168 W. A LiB3O5（LBO）crystal was used for second harmonic generation of the laser. As a result, at the pump power of 168 W, the maximum power of the frequency-doubled output at 555 nm was found to be 3.1 W with a pulse repetition rate of 10 k Hz, corresponding to an optical-to-optical conversion efficiency of about 1.8%. And the pulse width of 555 nm wave was 176 ns. The M2 factors are measured to be 19.6 and 21.3 in the horizontal and vertical directions, respectively.

关 键 词：555 nm激光 Nd:GGG晶体 LiB3O5晶体 

分 类 号：TN248.1[电子电信—物理电子学]