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作 者:张岩龙[1] 庄奕琪[1] 李振荣[1] 任小娇[1] 齐增卫[1] 杜永乾[1] 李红云[1]
机构地区:[1]西安电子科技大学微电子学院,陕西西安710071
出 处:《西安电子科技大学学报》2015年第2期89-94,145,共7页Journal of Xidian University
基 金:国家自然科学基金资助项目(61306033)
摘 要:设计了一种具有低插入损耗、低相位误差的5位CMOS集总式衰减器.该衰减器基于0.18μm CMOS工艺,采用桥T和π形衰减结构,通过NMOS晶体管开关控制5个独立的衰减模块,在5-20GHz的工作频段范围内实现步长1dB、动态范围0-31dB的信号幅度衰减.其中,串联控制开关管采用体端通过电阻与源极相连的结构,在不增加寄生电容的前提下,降低导通电阻;并联控制开关采用体端交流悬浮结构,以提高整体衰减器的线性度.较大衰减量的衰减模块采用电感进行补偿,以减小附加相移.仿真结果显示,该衰减器插入损耗最小为6.1dB,最大为12.6dB,各状态衰减量均方根小于0.5dB,附加相移均方根小于3.4°,中心频率处1dB压缩点为14.13dBm.A 5 - 20GHz lumped CMOS attenuator with a low insertion loss and a low phase error is presented. The attenuator is based on bridged-T and n type attenuative networks and implemented with 0. 18μm CMOS technology, and it operates with 5 independent attenuative modules by NMOS switches. At the frequency range of 5-20 GHz, the attenuator has a 0- 31 dB attenuation range with 1 dB increase. In the attenuator, the series switches are body-source connected by a resistor to minimize the insertion loss without involving too much capacitance, and the shunt switches are ac bodyfloated to improve linearity. The larger attenuative modules are compensated for insertion phase with inductors. As the layout simulation results show, the minimum insertion loss is 6.1 dB and the maximum one is 12.6 dB. The root mean square (RMS) attenuative amplitude is less than 0.5 dB, and the RMS insertion phase is less than 3.4°. The 1 dB compression point at the center frequency is 14.13 dBm.
关 键 词:衰减器 步进式衰减器 CMOS开关 低插入损耗 低相位误差
分 类 号:TN715[电子电信—电路与系统]
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