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作 者:李玉茹[1] 李晓岚[1] 孙同年[1] 孙聂枫[2]
机构地区:[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]专用集成电路重点实验室,石家庄050051
出 处:《半导体技术》2015年第4期289-293,共5页Semiconductor Technology
摘 要:在LEC-In P晶体生长过程中,孪晶的产生是一个影响In P单晶率的突出问题。生长高质量、大直径的单晶是当前In P晶体生长的发展方向,减少孪晶一直是In P单晶生长技术的研究重点。国内外学者研究了影响孪晶产生的相关因素,但具体产生机制仍未确定。大量的实验研究表明In P晶体中的孪晶通常出现在三相界面处的边缘小平面上,且不论内砍还是外切孪晶均产生在{111}面上。晶体生长转肩过程中改变提拉速度会导致边缘过冷度增加,很容易产生孪晶。研究表明可以调整降温速率来实现对晶体直径的控制,减少拉速改变的频率避免造成边缘处过冷度增大,使得晶体生长实现平滑转肩,减小转肩时孪晶的产生概率。On crystal growth of LEC-In P,the formation of the twin crystallite is one of the most serious defects which influences the yield of usable single-crystalline material. At present,high quality and large diameter In P single crystal growth is the main direction. How to reduce the twin crystallite is the emphasis in the study of the crystal growth of In P. Some factors that affect the twin crystallite formation were investigated by domestic and foreign scholars. The detail formation mechanism is yet to be determined however. Large number of experiments demonstrate that the twin crystallite commonly occurrs on the edge facets in the three phase boundary,and the twin crystallite without the reference to inside or outside are all observed on { 111} facets. Changing the pulling rate in the later of shouldering will result in the exceeding of the supercooling on the edge,and easy togenerate the twin crystallite. The research shows that the crystal diameter can be controlled by adjusting the cooling rate,the extent of changing the pulling rate is reduced to avoid increase the supercooling on the edge facets.
关 键 词:LEC-In P 孪晶 过冷度 降温速率 平滑转肩
分 类 号:TN304.23[电子电信—物理电子学]
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