新型同轴型混合碳纳米管填充的硅通孔  

Novel Coaxial Mixed Carbon Nanotube Bundle Based Though-Silicon Vias

作　　者：王兴君[1,2] 史凌峰[1] 

机构地区：[1]西安电子科技大学电路CAD所,西安710071 [2]陕西国防工业职业技术学院电子信息学院,西安710302

出　　处：《半导体技术》2015年第4期294-301,共8页Semiconductor Technology

基　　金：重点大学基础研究基金资助项目(JB140220)

摘　　要：针对碳纳米管填充的硅通孔（TSV）的信号传输性能优化问题,提出一种新型的基于同轴型混合碳纳米管填充的硅通孔结构。在内外层管束交界处的耦合电容的基础上,提出新型TSV结构的可变参数等效电路模型,并基于TSV在三种不同应用层次上的尺寸参数,通过此电路模型分析新型TSV中的信号传输性能。分析结果表明,在0~40 GHz内与单一类型碳纳米管填充的TSV相比,所提出TSV结构具有更小的插入损耗与更短的上升时延,并随TSV的尺寸增大优势更加显著。最后,对所提出TSV结构进行时域眼图仿真,仿真结果表明其在高速集成电路中可以满足对信号完整性的要求。To optimize the signal transmission performance of the carbon nanotube（ CNT） bundle based though-silicon vias（ TSV）,a novel coaxial mixed CNT bundle based TSV structure was presented.Modified alterable parameter equivalent circuit models of the proposed novel TSV structure were put forward,which interface capacitive couplings between inner and outer bundles. These scalable circuit models were used in simulation to study the signal transmission performance of the proposed TSV structure at three different application dimensions levels. Simulation results show that compared with single-walled CNT bundle based TSV at the range of 0- 40 GHz,the proposed TSV structure has a decrease of the insertion loss and a reduction of rising time delay,which will be signicant with the size increasing. Finally,the time-domain simulation results show that the novel structure in high-speed ICs can be met with signal integrity.

关 键 词：碳纳米管(CNT) 硅通孔(TSV) 可变参数电路模型 信号传输性能 信号完整性 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]