双层双频电磁带隙结构的电磁特性  

Frequency characterizations of the double-layer and dual band EBG structure

作　　者：王素玲[1] 郭楠[1] 赵清峰[1] 刘亚宁[1] 

机构地区：[1]河南理工大学电气工程与自动化学院,河南焦作454000

出　　处：《电波科学学报》2014年第6期1183-1188,共6页Chinese Journal of Radio Science

基　　金：国家自然科学基金支持(61040016);河南理工大学博士基金(64998357)

摘　　要：提出了一种双层电磁带隙(Electromagnetic Band Gap,EBG)结构,构建其电感电容(Inductance Capacitance,LC)等效电路并推算出双层EBG的谐振表达式,通过仿真软件对双层EBG结构上下两层的参数进行调节,分析各参数对电磁特性的影响规律,结果表明双层EBG可以产生两个零位相频率点,下层结构对应的零位相频率主要与下层的介质厚度及贴片大小有关,几乎不受上层的影响,而上层结构的谐振频率不仅与其自身参数有关也要考虑下层对其的影响,仿真结果与理论分析一致.该结构为EBG的具体设计和应用提供了指导依据.A double-layer electromagnetic band gap （EBG） structure is presented. The expressions of the double-layer EBG structure are derived based on its inductance and capacitance （LC） equivalent circuit proposed. The paper presents the relationship be- tween the resonance frequency and the parameters of the structure by analyzing the characteristic of the double-layer EBG structure with different parameters of each layer based on the simulating research. The results show that the double-layer EBG has two zero-phase points, the lower one is mainly related with its dielectric thickness and patch size and has nothing to do with the upper layer, which is not only related with its own parameters also take the influence of the lower one into account. The simulation results agree well with the theoretical analysis,which provides specific guidance in the EBG de- sign and application.

关 键 词：电磁带隙 双层EBG结构 零位相频率 高阻抗 

分 类 号：TN82[电子电信—信息与通信工程]