一种内线转移可见光CCD光电特性模拟分析  

Simulation of Photoelectric Characteristics of Interline Transfer CCD

作　　者：杨洪[1] 李立[1] 吕玉冰[1] 白雪平[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2014年第5期773-776,781,共5页Semiconductor Optoelectronics

摘　　要：运用半导体二维数值模拟软件sentaurus TCAD,对内线转移可见光CCD积分过程、读出过程光敏区域电势变化规律进行了数值模拟研究,建立了sentaurus TCAD软件模拟内线转移CCD器件的仿真模型;对影响器件电荷容量、抗晕性能的纵向抗晕p阱浓度、结深进行了模拟分析,得出p阱浓度应控制在（2.5～5.5）×1016 cm-3,结深应控制在5.5～6.5μm的结论。By using two-dimensional simulation software sentaurus TCAD, simulations were performed on the variable regularities of the potential of the photosensitive area for interline transfer charge coupled device （IT-CCD）, and the simulation model was established. Based on simulation analysis on the charge capacity, the p-well concentration and junction depth, it is concluded that the optimal parameters of p-well concentration and depth should be controlled as 2.5×10^16～5.5×10^16 cm^-3 and 5.5～6.5 μm, respectively.

关 键 词：内线转移CCD 光电特性 纵向抗晕 数值模拟 

分 类 号：TN386.5[电子电信—物理电子学]