应用解析法和漏磁链法推导计算500kV旁柱励磁单相自耦变压器非额定分接电抗电压  

500k V Singe-Phase Auto-Transformer Non-Rated Tapping Reactance Voltage Calculation and Derivation Based on Analytical Method and Magnetic Leakage Method

作　　者：田颢亮 姜建华 崔超 

机构地区：[1]江苏上能新特变压器有限公司,江苏常州213017 [2]中国华电变压器工程技术中心,江苏常州213017

出　　处：《变压器》2014年第11期1-5,共5页Transformer

摘　　要：应用解析法和漏磁链法推导了低压励磁、调压绕组置于旁柱的500k V单相线端调压自耦变压器的非额定分接两种电抗电压计算公式。运用两种计算公式分别计算同一台产品的电抗电压,得到基本相同的计算结果,验证了两种计算公式的正确性。Based on the analytical method and magnetic leakage method,two calculation formulas for non-rated tapping reactance voltage of 500 k V singe-phase auto-transformer with low voltage excitation,terminal voltage regulation,the regulating winding fixed on side limb are derived.The reactance voltage of a product is calculated by the formulas.The results verified the correctness of the formulas.

关 键 词：解析法 漏磁链法 自耦变压器 

分 类 号：TM411.3[电气工程—电器]