低温烧结Mg_4Nb_2O_9微波介质陶瓷  

Low-temperature Sintering of Mg_4Nb_2O_9 Microwave Dielectric Ceramics

作　　者：刘长菊[1] 苏未安[1] 

机构地区：[1]江西理工大学理学院,赣州341000

出　　处：《硅酸盐通报》2015年第3期782-787,共6页Bulletin of the Chinese Ceramic Society

基　　金：国家自然科学基金地区基金项目(11464016)

摘　　要：研究了V2O5对Mg4Nb2O9陶瓷的烧结温度、相结构和微波介电性能的影响。结果表明,添加1%~8%的V2O5,能使该陶瓷的烧结温度降低到1000~1050℃而对其微波介电性能的影响很小,材料的主晶相为有序型刚玉结构的Mg4Nb2O9,存在Mg4Nb2O6和Mg5Nb4O15杂相而没有检测到V2O5的存在。陶瓷的密度对微波介电性能起着决定性作用,介电常数εr与密度成线性关系（在99.99%的置信限内,其相关系数为0.98252）,Q·f值与密度的关系较复杂。添加1%的V2O5,将Mg4Nb2O9陶瓷的烧结温度降低到了1050℃,得到了εr=12.72,Q·f=151040GHz的优异性能。The low-temperature sintered Mg4Nb2O9 microwave dielectric ceramics using V2O5 as a sintering aid have been developed. The results indicate that 1% and 8% V2O5 addition could lower the firing temperature of Mg4Nb2O9 ceramics effectively from 1300 to 1050 and 1000 ℃, respectively, while maintaining perfect microwave dielectric properties. X-ray diffraction shown that the main phase was MgnNb2O9, and Mg4Nb2O6, Mg5Nb4O15 co-existed but V2o5 was not detected. The dielectric properties of Mg4 Nb2O9 ceramic were dominated by its density. The relationship between the dielectric constant and the density was linearity and the correlation coefficient was r = 0. 98252. However, the relation between value and density was complex. Typically, Mg4Nb2O9 microwave dielectric ceramics doped with 1% V2O5 sintered at 1050 ℃ exhibits the excellent microwave properties,εr = 12.72,Q · f= 151040 GHz.

关 键 词：微波介质陶瓷 低温烧结Mg4Nb2O9 刚玉型晶体结构 助熔剂V2O5 

分 类 号：TQ174[化学工程—陶瓷工业]