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作 者:迟庆国[1,2] 张昌海[1] 崔洋[1] 刘刚[1]
机构地区:[1]哈尔滨理工大学应用科学学院,黑龙江哈尔滨150080 [2]哈尔滨理工大学工程电介质及其应用教育部重点实验室,黑龙江哈尔滨150080
出 处:《哈尔滨理工大学学报》2015年第1期1-5,共5页Journal of Harbin University of Science and Technology
基 金:国家自然科学基金(51202049);黑龙江省自然科学基金(QC2012C045)
摘 要:为了获得优异性能的热释电薄膜材料,详细论述了热释电薄膜探测优值的提高途径和影响因素.研究重点在提高薄膜热释电系数(新材料体系的开发及原有材料的掺杂改性)以及降低薄膜的介电常数(多孔/多层薄膜结构设计).但单纯热释电系数的提高对于提高探测优值作用有限;而设计多孔/多层结构会造成薄膜质量劣化,增大漏电流密度.因此作者结合多孔薄膜和多层薄膜的各自优点,利用界面优化调谐的作用,在低结晶温度下,设计和制备出双层致密薄膜包夹多孔薄膜的复合结构薄膜.由此给出一种提高热释电薄膜探测优值的有效途径,同时复合结构薄膜体系的低温结晶对热释电薄膜在硅基电路上实现单片集成化具有重要价值.In order to obtain pyroelectric film materials with excellent performance, the article discusses the improved ways and influencing factors of pyroelectric figure of merit. The main research work focuses on two as- pects: improving the pyroelectric coefficient (development of new material systems and doping original material) and lowering dielectric constant (porous/,nultilayer film structure design). Generally speaking, the former can not improve pyroelectrie figure of merit increase effectively, and the latter results in the cracking of the film quality, which will make leakage current density increase greatly. Combining the respective advantages of the porous and multilayer films, by introducing a seed layer between film and electrode interlayer, low temperature crystallization of dense/porous/dense sandwich structure film are achieved, which gives an effective way to improve the deteetivity figure of merit of pyroelectric thin film. Meanwhlie, the low temperature crystallization of the composite film has an important value in integrating circuit based on a silicon chip.
关 键 词:热释电薄膜 探测优值 复合结构 界面优化 低温晶化
分 类 号:TN216[电子电信—物理电子学]
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