电阻热蒸法制备Cu_2O薄膜及其光学性能  

Prepare of Cu_2O Thin-films by Thermal Evaporation Method and Their Optical Properties

作　　者：宋扬[1] 彭英姿[1] 杨凌云[1] 徐娙梅[1] 

机构地区：[1]杭州电子科技大学理学院应用物理系,浙江杭州310018

出　　处：《山东化工》2015年第7期6-9,共4页Shandong Chemical Industry

基　　金：浙江省自然科学基金资助项目(LY12A01002)

摘　　要：用电阻热蒸法在玻璃基底上沉积铜薄膜,然后在空气中退火得到铜氧化物薄膜。分别用XRD、AFM、紫外-可见分光光度计对薄膜进行表征,研究退火温度及退火时间对铜氧化物薄膜结构和光学性能的影响。结果表明140~180℃退火时可以得到纯的Cu2O,薄膜表面颗粒大小在0.80~0.90μm之间,直接禁带宽度在1.8~2.5e V之间。Copper oxide thin films were synthesized on glass substrates by thermal oxidization of Cu films which were prepared using a thermal evaporation method. XRD,AFM and UV-vis-NIR absorption spectra were used to characterize the thin films in order to study the dependence of the structure,morphology and optical properties of the thin films on annealing temperatures and duration time. Our experimental results show that pure Cu2 O can be obtained at 140~180℃with the size ranging from 0. 80 to 0. 90μm. Their direct allowed band gap is of 1. 8~2. 5eV.

关 键 词：CU2O 热退火 XRD AFM 吸收谱 

分 类 号：TB383[一般工业技术—材料科学与工程]