Pure phase MoN: preparation by chemical-diffused permeation and enhanced conductivity with rare earth Gd  

Pure phase MoN: preparation by chemical-diffused permeation and enhanced conductivity with rare earth Gd

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作  者:Xin Li Chao Gao Yu-Zhi Jiang Xi-Kun Li 

机构地区:[1]School of Materials Science and Engineering, Shenyang Ligong University

出  处:《Rare Metals》2015年第2期137-142,共6页稀有金属(英文版)

基  金:financially supported by National Natural Science Foundation of China (No. 51272163, No. 51274143)

摘  要:MoN was prepared by rare earth Gd thermaldiffused permeation method via solid–gas interface reaction using(NH_4)_4[NiMo6O_24H_6]·7H_2O(abbreviated as NiMo6) as the precursor. Thermo-gravimetric differential thermal analysis(TG–DTA) was used to study the product's stability. The results of X-ray diffractometer(XRD)and X-ray photoelectron spectroscopy(XPS) indicate that a new hexagonal crystal MoN forms after the rare earth gas permeation and Gd3+are diffused as substitution ions into the crystal lattice of MoN, and the surface valence of elemental content was measured by XPS. The conductivity results by direct current(DC) four-probe method show that MoN obtained from the Gd thermal permeation exhibits conductor character in the temperature range of 298–740 K and semiconductor behavior in 740–800 K.MoN was prepared by rare earth Gd thermaldiffused permeation method via solid–gas interface reaction using(NH_4)_4[NiMo6O_24H_6]·7H_2O(abbreviated as NiMo6) as the precursor. Thermo-gravimetric differential thermal analysis(TG–DTA) was used to study the product's stability. The results of X-ray diffractometer(XRD)and X-ray photoelectron spectroscopy(XPS) indicate that a new hexagonal crystal MoN forms after the rare earth gas permeation and Gd3+are diffused as substitution ions into the crystal lattice of MoN, and the surface valence of elemental content was measured by XPS. The conductivity results by direct current(DC) four-probe method show that MoN obtained from the Gd thermal permeation exhibits conductor character in the temperature range of 298–740 K and semiconductor behavior in 740–800 K.

关 键 词:Rare earth permeation MON CONDUCTIVITY GD 

分 类 号:TG146.45[一般工业技术—材料科学与工程]

 

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