场效应晶体管中接触孔应力技术的研究  

Study of Contact Strain Technology in MOSFETs

作　　者：赵利川[1] 闫江[1] 

机构地区：[1]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100029

出　　处：《微电子学》2015年第2期267-270,共4页Microelectronics

基　　金：国家02重大专项资助项目(2009ZX02035)

摘　　要：随着集成电路集成度的不断提高以及场效应晶体管尺寸的微缩,沟道载流子迁移率退化越来越严重,通过沟道应力技术提升载流子迁移率从而提高性能的技术被广泛应用。介绍了接触孔应力对沟道的影响,分析了接触孔与沟道间距离及源漏区外延厚度对沟道应力的影响。通过对应力传导机制的分析,提出了通过调节侧墙材料和结构来优化沟道应力的方法。With the increasing of integration density and scaling down of MOSFETs,carrier mobility degraded greatly in short channel devices.The strain technology was widely used to enhance the mobility and improve the performance.The impacts of contact strain on the channels were presented.The impacts of the distance between contact hole and channel and source/drain epitaxy thickness on the channel stress were investigated.The stress transport mechanism was discussed.A kind of method to optimize the channel stress through adjusting the spacer materials and structures was proposed.

关 键 词：迁移率 沟道应力 接触孔应力 侧墙 

分 类 号：TN305.99[电子电信—物理电子学]