半导体激光器电导数及其可靠性的研究  

Research on Electric Derivatives and Reliability of Semiconductor Lasers

作　　者：刘夏[1,2] 李特[1] 路国光[2] 郝明明[2] 

机构地区：[1]长春理工大学高功率半导体激光器国家重点实验室,吉林长春130022 [2]工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术重点实验室,广东广州510610

出　　处：《激光与光电子学进展》2015年第4期108-115,共8页Laser & Optoelectronics Progress

基　　金：国家重大科学仪器设备开发专项(2011YQ040077);工业和信息化部电子第五研究所发展基金(13Q05);国家自然科学基金(61107054)

摘　　要：为了探索和验证半导体激光器电导数参数与其可靠性的关系,将12个半导体激光器串联后进行高温加速电老化,直到器件不激射。监测在加速老化过程中半导体激光器电导数参量的变化情况。通过分析老化期间监测的数据,发现电导数曲线在阈值电流处的下沉高度随着老化时间的增加而变小;结特征参量与电导数曲线(在大于阈值电流的工作状态下)在电流I=0处的截距值随着老化过程逐渐变大。并且结特征参量的变化量在早期处于比较小的平稳状态,然后快速增加到一定值并保持一段时间,之后快速下降并最终稳定在比较小的值,这说明器件退化分为3个阶段:在早期退化较慢,之后退化很快并保持一定的退化速度,最后又到了慢速退化期。从实验结果得知电导数参量与器件的寿命和老化程度有密切关系,并且电导数参数可表征半导体激光器的退化状态。For exploring and proving the relationship between semiconductors lasers＇ electrical derivatives and their reliability, 12 semiconductor lasers are put in series to electric accelerated aging until the devices do not work. Monitor the variation of semiconductors＇ electric derivatives in the process. Then, the figure is gotten by dealing the experimental data. The experiment finds that the dip of the electric derivative curve at the threshold becomes smaller in the accelerated aging process; The characteristic parameter of junction and the intercept of the electrical derivative above the threshold at I=0 become larger in the accelerated aging process. And the variable of characteristic parameter keeps a small one early. Then, it becomes larger and keeps a large one some time. Finaly, it decreases quickly and keeps a small one. The phenomenon indicates that there are three stages of deterioration of devices： devices deteriorate slowly early, then deteriorate quickly and keep for some time, and devices deteriorate slowly again. There is a close relationship between electric derivatives and lifetime of devices and the deterioration of devices, and electric derivatives can characterize state of semiconductor lasers.

关 键 词：激光器 半导体激光器 可靠性 电导数 加速老化 

分 类 号：TN248.4[电子电信—物理电子学]