基于IGBT栅极疲劳机理的阈值电压可靠性模型研究  

Reliability Model Research of Threshold Voltage Based on the Gate Fatigue Mechanism of IGBT

作　　者：刘宾礼[1] 刘德志[1] 唐勇[1] 李晖 

机构地区：[1]海军工程大学,舰船综合电力技术国防科技重点实验室 [2]海军91492部队

出　　处：《电力电子技术》2015年第4期36-38,60,共4页Power Electronics

基　　金：国家自然科学基金(51277178);国家重点基础研究发展计划973项目(2013CB035601)~~

摘　　要：基于绝缘栅双极型晶体管(IGBT)栅极疲劳机理,提出采用阈值电压对IGBT健康状态进行监控的可靠性评估方法。该方法通过研究阈值电压随疲劳程度的变化规律。建立了IGBT阈值电压可靠性评估模型。仿真和实验验证了该模型的正确性与准确性。通过该模型可以对IGBT的健康状况进行准确评估。Based on the gate fatigue mechanism of insulated gate bipolar transistor（IGBT）, it is put forward that the reliability evaluation method of threshold voltage against health monitoring.h is investigated that the law of fatigue and threshold voltage,then the reliability model of threshold voltage is established.The simulation and experimental results verify the rightness and accuracy of the model.It is significant for the accurate evaluation of IGBT health.

关 键 词：绝缘栅双极型晶体管 疲劳机理 可靠性 

分 类 号：TN32[电子电信—物理电子学]